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Probing electrochemistry at the nanoscale: in situ TEM and STM characterizations of conducting filaments in memristive devices

机译：纳米级电化学研究：忆阻器件中导电细丝的原位TEM和STM表征

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Memristors or memristive devices are two-terminal nanoionic systems whose resistance switching effects are induced by ion transport and redox reactions in confined spaces down to nanometer or even atomic scales. Understanding such localized and inhomogeneous electrochemical processes is a challenging but crucial task for continued applications of memristors in nonvolatile memory, reconfigurable logic, and brain inspired computing. Here we give a survey for two of the most powerful technologies that are capable of probing the resistance switching mechanisms at the nanoscale – transmission electron microscopy, especially in situ, and scanning tunneling microscopy, for memristive systems based on both electrochemical metallization and valence changes. These studies yield rich information about the size, morphology, composition, chemical state and growth/dissolution dynamics of conducting filaments and even individual metal nanoclusters, and have greatly facilitated the understanding of the underlying mechanisms of memristive switching. Further characterization of cyclic operations leads to additional insights into the degradation in performance, which is important for continued device optimization towards practical applications.
机译：忆阻器或忆阻器件是两末端的纳米离子系统，其电阻转换效应是由离子传输和氧化还原反应在低至纳米甚至原子尺度的密闭空间中引起的。对于忆阻器在非易失性存储器，可重构逻辑和大脑启发式计算中的持续应用，了解这样的局部和不均匀的电化学过程是一项具有挑战性但至关重要的任务。在这里，我们对两种能够探测纳米级电阻转换机制的最强大技术进行了调查-透射电子显微镜（尤其是原位）和扫描隧道显微镜，用于基于电化学金属化和化合价变化的忆阻系统。这些研究提供了有关导电细丝甚至单个金属纳米团簇的尺寸，形态，组成，化学状态以及生长/溶解动力学的丰富信息，并且极大地促进了对忆阻性开关的潜在机理的理解。循环操作的进一步表征可导致对性能下降的更多了解，这对于针对实际应用的持续器件优化非常重要。

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